Rapid Thermal Processing for Future Semiconductor Devices

Rapid Thermal Processing for Future Semiconductor Devices

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This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.References [1] [2] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] R. H. Dennard , F. H. Gaensslen, H. N. Yu, V. L. Rideout, ... DIOS USERSa#39; manual, ISE. ... K. Suzuki, aquot;High concentration impurity diffusion model, aquot; Solid-State Electronics, vol.


Title:Rapid Thermal Processing for Future Semiconductor Devices
Author: H. Fukuda
Publisher:Elsevier - 2003-04-02
ISBN-13:

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